Abstract
Cross-bar structure memristors are fabricated using gelatin film as the dielectrics. The performance of the devices and the effects of gelatin film thickness and baking temperature are investigated. The results show that the best thickness is about 80 nm and the baking temperature is about 105 degrees Celsius. The optimized memristors show a bipolar resistive switching behavior with the ratio between the high resistance state and low resistance state over 104, a retention time over 106 sec without any obvious deterioration, and excellent stability and reliability, demonstrating its application potential.