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Film bulk acoustic resonator pressure sensor with self temperature reference
Journal article   Open access   Peer reviewed

Film bulk acoustic resonator pressure sensor with self temperature reference

X. L. He, L. Garcia-Gancedo, P. C. Jin, J. Zhou, W. B. Wang, Shurong Dong, J. Luo, A. Flewitt and W. I. Milne
Journal of Micromechanics and Microengineering, Vol.22(12)
25/10/2012

Abstract

FBAR sealed cavity pressure sensor temperature sensor General Science and Technology Topics
A novel film bulk acoustic resonator (FBAR) with two resonant frequencies which have opposite reactions to temperature changes has been designed. The two resonant modes respond differently to changes in temperature and pressure, with the frequency shift being linearly correlated with temperature and pressure changes. By utilizing the FBAR's sealed back trench as a cavity, an on-chip single FBAR sensor suitable for measuring pressure and temperature simultaneously is proposed and demonstrated. The experimental results show that the pressure coefficient of frequency for the lower frequency peak of the FBAR sensors is approximately −17.4 ppm kPa−1, while that for the second peak is approximately −6.1 ppm kPa−1, both of them being much more sensitive than other existing pressure sensors. This dual mode on-chip pressure sensor is simple in structure and operation, can be fabricated at very low cost, and yet requires no specific package, therefore has great potential for applications.
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