Abstract
The realization of an Indium Phosphide material based Multi Quantum Well Mach-Zehnder modulator (InP MZ) provides many advantages compared to other contemporary optical modulator technologies available. Utilizing the Quantum Confined Stark Effect (QCSE) in a semiconductor Multi Quantum Well (MQW) it enables a small physical size modulator to be realized with comparatively low drive voltage and low power consumption. The development of a equivalent InP MZ model enables optical systems performance to be simulated and is a very important tool for system architects as part of a technology evaluation activity, enabling the performance of an optical component incorporating the InP MZ to be evaluated and overall systems performance and ultimate network topology to be quantified prior to committing financial expense and other resources. This paper discusses the realization of the model following a detailed analysis of the InP MZ modulator characteristics. A comparison of the simulated versus practical results of a fabricated InP MZ is presented.